US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Diffusion barrier layer for conductive via to decrease contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,103, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Diffusion barrier layer for conductive via to decrease contact resistance" was invented by Hsiu-Wen Hsueh (Taichung, Taiwan), Chii-Ping Chen (Hsinchu, Taiwan), Neng-Jye Yang (Hsinchu, Taiwan), Ya-Lien Lee (Baoshan Township, Taiwan), An-Jiao Fu (Taipei, Taiwan) and Ya-Ching Tseng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to a semiconductor structure including a dielectric layer over a substrate. A conductive body is disposed within the dielectric layer. The conductive body has a bottom surface continuou...