US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Contact structures for reducing electrical shorts and methods of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,368,097, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Contact structures for reducing electrical shorts and methods of forming the same" was invented by Tung-Jiun Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A planarization dielectric layer is formed over the semiconductor device on a semiconductor substrate. A device contact via structure is formed through the planarization dielectric layer. A planar dielectric spacer liner is formed over the planarization dielectric layer, and is patterned to provide an opening over the device contact via structure. An etch stop dielectric lin...