US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Conductive feature formation" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,293, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Conductive feature formation" was invented by Yu-Lien Huang (Jhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides example embodiments relating to conductive features, and methods of forming the conductive features, that have differing dimensions. In an embodiment, a structure includes a substrate, a dielectric layer over the substrate, and first and second conductive features through the dielectric layer to first and second source/drain regions, respectively, on the substrate. The first conductive feature h...