US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Channel structures for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,341, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Channel structures for semiconductor devices" was invented by Ding-Kang Shih (New Taipei, Taiwan) and Pang-Yen Tsai (Jhu-bei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers and second nanostructured layers on a fin structure. The method can also include removing the second nanostructured layers to form multiple gate openings; forming a germanium...