US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Bottom-electrode interface structure for memory" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,329, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Bottom-electrode interface structure for memory" was invented by Tzu-Yu Lin (Taoyuan, Taiwan), Chia-Wen Zhong (Taichung, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "1. Various embodiments of the present disclosure are directed towards a ferroelectric random-access memory (FeRAM) cell or some other suitable type of memory cell comprising a bottom-electrode interface structure. The memory cell further comprises a bottom electrode, a switching layer over the bottom electrode, and a top electrode over the s...