US Patent Issued to Taiwan Semiconductor Manufacturing on July 22 for "Access transistors in a dual gate line configuration and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,307, issued on July 22, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Access transistors in a dual gate line configuration and methods for forming the same" was invented by Ming-Yen Chuang (Hsinchu, Taiwan), Chia Ling (Hsinchu, Taiwan), Katherine H. Chiang (New Taipei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a two-dimensional array of unit cell structures overlying a substrate. Each unit cell structure includes an active layer, a gate dielectric underlying the active layer, two gate electrodes underlying the gate dielectric, and two s...