ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,958, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ultra-thin fin structure and method of fabricating the same" was invented by Sherry Li (Hsinchu, Taiwan), Chia-Der Chang (Hsinchu, Taiwan) and Yi-Jing Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section...