ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,910, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Three-dimensional memory devices and methods of manufacturing thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and i...