US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Source/drain contacts and methods of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,946, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain contacts and methods of forming same" was invented by Li-Zhen Yu (New Taipei, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a device layer comprising a first transistor and a second transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconne...