US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor memory structure and method for forming the semiconductor memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,994, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory structure and method for forming the semiconductor memory structure" was invented by Chih-Chuan Su (Hsinchu, Taiwan), Yu-Jen Wang (Hsinchu, Taiwan), Liang-Wei Wang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory structure includes bottom electrodes formed over a substrate. The structure also includes first magnetic tunneling junction (MTJ) elements formed over the bottom electrodes in a first region and a second region of the substrate. The structur...