US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Semiconductor devices with improved layout to increase electrostatic discharge performance" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,023, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with improved layout to increase electrostatic discharge performance" was invented by Hsiao-Ching Huang (New Taipei, Taiwan), Hao-Hua Hsu (Taipei, Taiwan) and Sheng-Fu Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first semiconductor device and second semiconductor device disposed on a semiconductor substrate. The first semiconductor device comprises a first gate structure, a first source region, and...