ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,184, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and methods of manufacturing thereof" was invented by Ching-Hung Kao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a recess along a top surface of a semiconductor substrate, the recess having a first sidewall and a second sidewall laterally opposite each other; a nitride-based spacer layer extending along the first sidewall of the recess; and a field oxide layer in the recess extending along a bottom surface of the recess. The second sidewall is defined by a shallow trench iso...