US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor devices and methods for fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,924, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices and methods for fabrication thereof" was invented by Jen-Po Lin (Hsinchu, Taiwan), Cherng-Yu Wang (Hsinchu, Taiwan) and Hsiao-Kuan Wei (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of present disclosure provide a MIM capacitor including a straining layer on an electrode, and a high-k dielectric layer formed on the straining layer. The straining layer allows the high-k dielectric layer to be highly crystallized without requiring an extra annealing process. The high crystallization of the high-...