US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor device with leakage current suppression and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,989, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with leakage current suppression and method for forming the same" was invented by Bo-Yu Lai (Taipei, Taiwan), Jyun-Chih Lin (New Taipei, Taiwan), Yen-Ting Chen (Taichung, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan), Wei Hao Lu (Taoyuan, Taiwan) and Li-Li Su (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a fin-shape base protruding from a substrate, channel structures suspended above the fin-shape base, a gate structure wrapping around...