US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor device structures" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,229, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device structures" was invented by Hsin-Che Chiang (Taipei, Taiwan), Jeng-Ya David Yeh (New Taipei, Taiwan), Chun-Sheng Liang (Changhua County, Taiwan) and Ju-Li Huang (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a...