US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,993, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD..

"Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same" was invented by Yi-Jing Lee (Hsinchu, Taiwan), Jeng-Wei Yu (New Taipei, Taiwan), Li-Wei Chou (Hsinchu, Taiwan), Tsz-Mei Kwok (Hsinchu, Taiwan) and Ming-Hua Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, first and second fins over the substrate and extending upwardly in a first direction, an epitaxial material comprising a first portion, a second portion, and a third portion, and a conducti...