US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Semiconductor device having dielectric hybrid fin" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,964, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having dielectric hybrid fin" was invented by Chun-Yuan Chen (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Li-Zhen Yu (Hsinchu, Taiwan), Cheng-Chi Chuang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate and a transistor on the substrate. The transistor includes a channel region that has at least one semiconductor nanostructure, and a gate electrode. A source/drain region is disposed adjacent to a first side of the channel region along a firs...