US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,187, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure" was invented by Kai-Hsuan Lee (Hsinchu, Taiwan), Jyh-Cherng Sheu (Hsinchu, Taiwan), Sung-Li Wang (Zhubei, Taiwan), Cheng-Yu Yang (Xihu Township, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan) and Sai-Hooi Yeong (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a first layer containing an amorphous first material is formed by a deposition process over a semiconductor layer. A second ...