ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,957, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Georgios Vellianitis (Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor device and the manufacturing methods are described. The device includes a gate structure having a gate layer and a ferroelectric layer, source and drain terminals, and a crystalline channel portion. The source and drain terminals are disposed at opposite sides of the gate structure. The crystalline channel portion extends between the source and drain terminals. The source and d...