ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,959, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Chih-Chuan Yang (Tainan, Taiwan) and Shih-Hao Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Nanostructure field-effect transistors (NSFETs) including isolation layers formed between epitaxial source/drain regions and semiconductor substrates and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate; a gate stack over the semiconductor substrate, the gate stack including a gate electrode and a gate dielectric layer...