US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,224, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Kuo-Cheng Ching (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu County, Taiwan), Keng-Chu Lin (Pingtung County, Taiwan) and Shi-Ning Ju (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor fin, a doped dielectric fin, a shallow trench isolation (STI) oxide, a gate structure, and source/drain regions. The semiconductor fin upwardly extends from a substrate. The doped dielectric fin u...