US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Schottky barrier diode with reduced leakage current and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,925, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Schottky barrier diode with reduced leakage current and method of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Te-An Chen (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a Schottky barrier diode includes: forming a first well region and a second well region adjacent to the first well region in a substrate; depositing a first dielectric layer over the first well region and the second well region; performing a first patterning operation on the first dielectric layer to cause the ...