US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Resistive memory devices using a carbon-based conductor line and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,170, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory devices using a carbon-based conductor line and methods for forming the same" was invented by Hung-Li Chiang (Taipei, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Lain-Jong Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An array of rail structures is formed over a substrate. Each rail structure includes at least one bit line. Dielectric isolation structures straddling the array of rail structures are formed. Line trenches are provided between neighboring pairs of the dielec...