US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Resistive memory cell with switching layer comprising one or more dopants" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,171, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory cell with switching layer comprising one or more dopants" was invented by Fa-Shen Jiang (Taoyuan, Taiwan), Cheng-Yuan Tsai (Chu-Pei, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Hsing-Lien Lin (Hsin-Chu, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan) and Bi-Shen Lee (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. ...