US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Resistive memory cell using an interfacial transition metal compound layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,173, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive memory cell using an interfacial transition metal compound layer and method of forming the same" was invented by Wen-Hao Cheng (Taichung, Taiwan), Yuan-Huang Lee (Hsinchu, Taiwan), Yu-Wen Liao (New Taipei, Taiwan), Yen-Yu Chen (Taichung, Taiwan) and Hsuan-Chih Chu (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory cell includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode includes at least one lower metallic barrier layer, a lower metal la...