US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Recessed gate for an MV device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,998, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Recessed gate for an MV device" was invented by Yi-Huan Chen (Hsin Chu, Taiwan), Chien-Chih Chou (New Taipei, Taiwan), Ta-Wei Lin (Minxiong Township, Taiwan), Hsiao-Chin Tuan (Taowan, Taiwan), Alexander Kalnitsky (San Francisco), Kong-Beng Thei (Pao-Shan Village, Taiwan), Shi-Chuang Hsiao (New Taipei, Taiwan) and Yu-Hong Kuo (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate...