US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Photonic semiconductor-on-insulator (SOI) substrate and method for forming the photonic SOI substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,360,314, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Photonic semiconductor-on-insulator (SOI) substrate and method for forming the photonic SOI substrate" was invented by Eugene I-Chun Chen (Taipei, Taiwan), Kuan-Liang Liu (Pingtung, Taiwan), De-Yang Chiou (Hsinchu, Taiwan), Yung-Lung Lin (Taichung, Taiwan) and Chia-Shiung Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is form...