ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,046, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Photodiode structure for image sensor" was invented by Min-Ying Tsai (Kaohsiung, Taiwan) and Ching I Li (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an image sensor having an epitaxial deposited photodiode structure surrounded by an isolation structure, and an associated method of formation. In some embodiments, a first epitaxial deposition process is performed to form a first doped EPI layer over a substrate. The first doped EPI layer is of a first doping type. Then, a second epitaxial depositio...