US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Partial metal grain size control to improve CMP loading effect" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,987, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Partial metal grain size control to improve CMP loading effect" was invented by Anhao Cheng (Hsinchu, Taiwan), Yen-Yu Chen (Hsinchu, Taiwan) and Fang-Ting Kuo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate containing a first active region in a first region of the substrate and a second active region in a second region of the substrate, a plurality of first gate structures over the first active region each including a first gate stack having a f...