ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,281, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof" was invented by Tsung-Ling Tsai (Hsinchu, Taiwan), Shen-Nan Lee (Hsinchu County, Taiwan), Mrunal A. Khaderbad (Hsinchu, Taiwan), Chung-Wei Hsu (Hsinchu, Taiwan), Chen-Hao Wu (Hsinchu, Taiwan) and Teng-Chun Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Partial barrier-free vias and methods for forming such are disclosed herein. An exemplary interconnect structure of a multilayer interconnect feature includes a dielectric layer. A coba...