US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Nanosheet field-effect transistor device including multi-layer spacer film and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,979, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nanosheet field-effect transistor device including multi-layer spacer film and method of forming" was invented by Wen-Kai Lin (Hsinchu, Taiwan), Yung-Cheng Lu (Hsinchu, Taiwan), Che-Hao Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a dummy gate structure over a nanostructure, where the nanostructure overlies a fin that protrudes above a substrate, where the nanostructure comprises alternating layers of a first semiconductor materi...