US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Nano-FET semiconductor device and method of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,950, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nano-FET semiconductor device and method of forming" was invented by I-Hsieh Wong (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Xinpu Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments utilize a two layer inner spacer structure during formation of the inner spacers of a nano-FET device. The materials of the first inner spacer layer and second inner spacer layer can be selected to have a mismatch in their coefficients of thermal expansion (CTE). As the structure cools after deposition, the inner spacer ...