US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Multi-gate device and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,937, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Multi-gate device and related methods" was invented by Tsung-Lin Lee (Hsinchu, Taiwan), Choh Fei Yeap (Hsinchu, Taiwan), Da-Wen Lin (Hsinchu, Taiwan) and Chih-Chieh Yeh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a device includes providing a fin extending from a substrate, where the fin includes an epitaxial layer stack having a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing a portion of the epitaxial laye...