ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,271, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"MIM structure" was invented by Chun huan Wei (Hsin-Chu, Taiwan), Pin Yu Hsu (Hsin-Chu, Taiwan), Szu-Yuan Chen (Hsin-Chu, Taiwan), Po-June Chen (Hsin-Chu, Taiwan) and Kuan-Yu Chen (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of manufacturing a three dimensional (3D) metal-insulator-metal (MIM) capacitor in the back end of line, which can provide large and tunable capacitance values and meanwhile, does not interfere with the existing BEOL fabrication process. In one embodiment, a method for fabricating a sem...