US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Methods to improve magnetic tunnel junction memory cells by treating native oxide" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,364,165, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods to improve magnetic tunnel junction memory cells by treating native oxide" was invented by Jung-Tang Wu (Kaohsiung, Taiwan), Meng Yu Wu (Taichung, Taiwan), Szu-Hua Wu (Zhubei, Taiwan) and Chin-Szu Lee (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-clean process is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells ...