US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Methods for forming multi-gate transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,935, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for forming multi-gate transistors" was invented by Chang-Miao Liu (Hsinchu, Taiwan) and Wei-Lun Min (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, two source/drain features disposed on the substrate, a stack of channel layers disposed over the substrate and between the two source/drain features, and a gate structure disposed over and wrapping around the stack of channel layers. Each channel layer of the stack of channel layers has a dog-bone shape in a cross-sectional view ...