ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,177, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor devices" was invented by Po-Han Lin (Hsinchu, Taiwan) and Huan-Chieh Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a target layer to be patterned is formed over a substrate, a mask layer having an opening is formed over the target layer, the opening is enlarged in a first direction without enlarging the opening in a second direction crossing the first direction by a directional process, where the first and second directions are pa...