US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Method forming gate stacks adopting thin silicon cap" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,185, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method forming gate stacks adopting thin silicon cap" was invented by Jyun-Yi Wu (Hsinchu, Taiwan), Chung-Yi Su (Taipei, Taiwan), Tsung-Da Lin (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dummy gate stack on a semiconductor region, forming gate spacers on sidewalls of the dummy gate stack, removing the dummy gate stack to form a recess between the gate spacers, and forming a silicon oxide layer on the semiconductor region. The silicon oxide layer extends into the rece...