US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Method for improving profile of interconnect structure" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,227, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for improving profile of interconnect structure" was invented by Chun-Neng Lin (Hsinchu, Taiwan), Jian-Jou Lian (Hsinchu, Taiwan) and Chieh-Wei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a patterned dielectric layer over a substrate, the patterned dielectric layer including an interconnect opening having a sidewall surface and a bottom surface; and forming a doped film by an opening-adjustment process, the doped film being disposed on the patte...