ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,894, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for fabricating three-dimensional memory" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Chih-Yu Chang (New Taipei, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Chenchen Jacob Wang (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a three-dimensional memories is provided. A stack with multiple levels is formed, and each of the levels includes an isolation layer, a metal layer, and a semiconductor layer between the isolation layer and the ...