US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Memory device with reduced area" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,017, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device with reduced area" was invented by Chun-Ying Lee (Hsinchu, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Chieh Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of word lines (WLs) above a substrate; a plurality of memory strings laterally isolated from each other, each of the plurality of memory strings being operatively coupled to a respective subset of the plurality of WLs; and a plurality of drivers, each of the plurality of drivers being configured to control a corre...