US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Memory device comprising conductive pillars" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,907, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device comprising conductive pillars" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Tsuching Yang (Taipei, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan) and Kuo-Chang Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a multi-layer stack, a channel layer, a memory material layer and a memory material layer. The multi-layer stack includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately along a first direction. The m...