ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,985, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Memory device" was invented by Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first static random access memory (SRAM) cell, a second SRAM cell, and a first metal layer. The first SRAM cell includes a first write-port pull-up (PU) transistor and a second write-port PU transistor arranged in a Y-direction, and a first read-port PD transistor and a first read-port PG transistor. The second SRAM cell includes a third write-port PU transistor and a fourth write-port PU...