US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Memory device, integrated circuit device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,361,192, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device, integrated circuit device and method" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Chien-Ying Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit line, a word line, a memory cell including a capacitor and a transistor, and a controller. The transistor has a gate terminal coupled to the word line, a first terminal, and a second terminal. The capacitor has a first end coupled to the first terminal of the transistor, a second end coupled to t...