US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Isolation structures of semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,963, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures of semiconductor devices" was invented by Hung-Li Chiang (Taipei, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and I-Sheng Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The structure of a semiconductor device with isolation structures between FET devices and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure on a substrate and forming polysilicon gate structures with a first thr...