US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Isolation structures of semiconductor devices" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,962, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Isolation structures of semiconductor devices" was invented by Pinyen Lin (Rochester, N.Y.), Chin-Hsiang Lin (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, first and second fin structures formed over the substrate, and an isolation structure between the first and second fin structures. The isolation structure can include a lower portion and an upper ...