US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on July 15 for "Inner spacer features for multi-gate transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,988, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Inner spacer features for multi-gate transistors" was invented by Wei-Han Fan (Hsin-Chu, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Tzu-Hua Chiu (Hsinchu, Taiwan), Kuan-Hao Cheng (Hsinchu, Taiwan) and Po Shao Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each chann...