US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Germanium tin oxide-containing semiconductor device and methods for forming the same" (Belgian, Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,970, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Germanium tin oxide-containing semiconductor device and methods for forming the same" was invented by Georgios Vellianitis (Heverlee, Belgium), Oreste Madia (Hsinchu, Taiwan), Gerben Doornbos (Kessel-Lo, Belgium) and Marcus Johannes Henricus Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor may include an active layer containing an oxide compound material of at least two atomic elements including a first element of tin and a second element selected from Ge, Si, P, S, F, Ti, Cs, and Na and located ove...