ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,737, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gated tri-state inverter, and method of operating same" was invented by Tsung-Che Lu (Hsinchu, Taiwan), Chin-Ming Fu (Hsinchu, Taiwan) and Chih-Hsien Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gated tri-state (G3S) inverter includes: first, second and third transistors of a first dopant type (D1 transistors) and first, second and third transistors of a second dopant type (D2 transistors) serially connected between a first reference voltage and second reference voltage, the second dopant type being different than th...