US Patent Issued to Taiwan Semiconductor Manufacturing on July 15 for "Gate structure of semiconductor device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,974, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structure of semiconductor device and method of forming same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Weng Chang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are provided. The method includes forming a fin extending from a substrate. A dummy gate is formed over the fin. The dummy gate extends along sidewalls and a top surface of the fin. The dummy gate is removed to form a recess. A replacement gate is formed in the recess. Form...